Infineon-Single FETs, MOSFETs-IPB60R199CPA

Description

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.52nF


600V 180mΩ@10V 1 N-channel 139W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.52nF600V 180mΩ@10V 1 N-channel... Read more

$14.85 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.52nF


    600V 180mΩ@10V 1 N-channel 139W TO-263-3 Single FETs, MOSFETs RoHS

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