Infineon-Single FETs, MOSFETs-IPB60R299CPA

Description

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF


600V 270mΩ@10V 1 N-channel 96W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF600V 270mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF


    600V 270mΩ@10V 1 N-channel 96W TO-263-3 Single FETs, MOSFETs RoHS

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