Infineon-Single FETs, MOSFETs-IPB65R045C7

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;4.34nF


650V 40mΩ@10V 1 N-channel 227W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;4.34nF650V 40mΩ@10V 1 N-channel... Read more

$38.52 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;4.34nF


    650V 40mΩ@10V 1 N-channel 227W TO-263-3 Single FETs, MOSFETs RoHS

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