Infineon-Single FETs, MOSFETs-IPB65R110CFDA

Description

Drain to Source Voltage;650V/Gate Charge(Qg);118nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pF


N-Channel 650V 31.2A 277.8W Surface Mount TO-263-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);118nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pFN-Channel 650V... Read more

$20.61 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);118nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pF


    N-Channel 650V 31.2A 277.8W Surface Mount TO-263-3

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