Infineon-Single FETs, MOSFETs-IPB65R150CFDA

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;195.3W/Gate Threshold Voltage (Vgs(th));4V


650V 1 N-channel 195.3W TO-263-3 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;195.3W/Gate Threshold Voltage (Vgs(th));4V650V 1 N-channel 195.3W TO-263-3 Single FETs, MOSFETs RoHS Read more

$14.61 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;195.3W/Gate Threshold Voltage (Vgs(th));4V


    650V 1 N-channel 195.3W TO-263-3 Single FETs, MOSFETs RoHS

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