Infineon-Single FETs, MOSFETs-IPB65R225C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);225mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);313pF/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;996pF


650V 225mΩ@10V 1 N-channel 63W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);225mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);313pF/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;996pF650V 225mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);225mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);313pF/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;996pF


    650V 225mΩ@10V 1 N-channel 63W TO-263-3 Single FETs, MOSFETs RoHS

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