Infineon-Single FETs, MOSFETs-IPB65R280E6

Description

Drain to Source Voltage;650V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);183pF/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;950pF


650V 280mΩ@10V 1 N-channel 104W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);183pF/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);183pF/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;950pF


    650V 280mΩ@10V 1 N-channel 104W TO-263-3 Single FETs, MOSFETs RoHS

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