Infineon-Single FETs, MOSFETs-IPB80N06S2-07

Description

Drain to Source Voltage;55V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);215pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.4nF


55V 5.3mΩ@10V 1 N-channel 250W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);215pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.4nF55V... Read more

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    Description

    Drain to Source Voltage;55V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);215pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.4nF


    55V 5.3mΩ@10V 1 N-channel 250W TO-263 Single FETs, MOSFETs RoHS

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