Infineon-Single FETs, MOSFETs-IPD033N06N

Description

Drain to Source Voltage;60V/Gate Charge(Qg);38nC/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;3.4nF


60V 3.3mΩ@10V 1 N-channel 107W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);38nC/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input... Read more

$6.33 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);38nC/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;3.4nF


    60V 3.3mΩ@10V 1 N-channel 107W TO-252-3 Single FETs, MOSFETs RoHS

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