Infineon-Single FETs, MOSFETs-IPD046N08N5

Description

Drain to Source Voltage;80V/Gate Charge(Qg);53nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;3.8nF


80V 4.6mΩ@10V 1 N-channel 125W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);53nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

$7.41 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);53nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;3.8nF


    80V 4.6mΩ@10V 1 N-channel 125W TO-252-3 Single FETs, MOSFETs RoHS

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