Infineon-Single FETs, MOSFETs-IPD19DP10NMATMA1

Description

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);186mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);140pF


100V 186mΩ@10V 1 P-Channel 83W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);186mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);186mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);140pF


    100V 186mΩ@10V 1 P-Channel 83W TO-252-3 Single FETs, MOSFETs RoHS

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