Infineon-Single FETs, MOSFETs-IPD25DP06NM

Description

Drain to Source Voltage;60V/Gate Charge(Qg);10.6nC@30V/Number;1 P-Channel/Pd - Power Dissipation;28W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;420pF


60V 250mΩ@10V 1 P-Channel 28W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);10.6nC@30V/Number;1 P-Channel/Pd - Power Dissipation;28W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);10.6nC@30V/Number;1 P-Channel/Pd - Power Dissipation;28W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;420pF


    60V 250mΩ@10V 1 P-Channel 28W TO-252-3 Single FETs, MOSFETs RoHS

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