Infineon-Single FETs, MOSFETs-IPD30N08S2-22

Description

Drain to Source Voltage;75V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);21.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


75V 21.5mΩ@10V 1 N-channel 136W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);21.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);21.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


    75V 21.5mΩ@10V 1 N-channel 136W TO-252-3 Single FETs, MOSFETs RoHS

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