Infineon-Single FETs, MOSFETs-IPD33CN10NG

Description

Drain to Source Voltage;100V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;58W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.57nF


N-Channel 100V 27A 58W Surface Mount TO-252-3

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;58W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.27 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;58W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.57nF


    N-Channel 100V 27A 58W Surface Mount TO-252-3

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