Infineon-Single FETs, MOSFETs-IPD50N08S4-13

Description

Drain to Source Voltage;80V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);13.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.711nF


80V 13.2mΩ@10V 1 N-channel 72W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);13.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);13.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.711nF


    80V 13.2mΩ@10V 1 N-channel 72W TO-252-3 Single FETs, MOSFETs RoHS

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