Infineon-Single FETs, MOSFETs-IPD50R1K4CE

Description

Drain to Source Voltage;550V/Gate Charge(Qg);8.2nC@400V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.4Ω@13V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;178pF


550V 1.4Ω@13V 1 N-channel 42W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);8.2nC@400V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.4Ω@13V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;178pF550V 1.4Ω@13V 1... Read more

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);8.2nC@400V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.4Ω@13V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;178pF


    550V 1.4Ω@13V 1 N-channel 42W TO-252-3 Single FETs, MOSFETs RoHS

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