Infineon-Single FETs, MOSFETs-IPD50R520CP

Description

Drain to Source Voltage;550V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);520mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;680pF


550V 520mΩ@10V 1 N-channel 66W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);520mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;680pF550V 520mΩ@10V 1... Read more

$5.70 Excl. VAT

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);520mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;680pF


    550V 520mΩ@10V 1 N-channel 66W TO-252-3 Single FETs, MOSFETs RoHS

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