Infineon-Single FETs, MOSFETs-IPD60R180P7S

Description

Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.081nF


N-Channel 650V 11A 72W Surface Mount TO-252-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;72W/RDS(on);180mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.081nF


    N-Channel 650V 11A 72W Surface Mount TO-252-3

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