Infineon-Single FETs, MOSFETs-IPD60R380E6BTMA1

Description

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+155℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;700pF


600V 380mΩ@10V 1 N-channel 83W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+155℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;700pF600V 380mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+155℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;700pF


    600V 380mΩ@10V 1 N-channel 83W TO-252-3 Single FETs, MOSFETs RoHS

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