Infineon-Single FETs, MOSFETs-IPD650P06NM

Description

Drain to Source Voltage;60V/Gate Charge(Qg);39nC@30V/Number;1 P-Channel/Pd - Power Dissipation;83W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);54pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;1.6nF


P-Channel 60V 22A 83W Surface Mount TO-252-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);39nC@30V/Number;1 P-Channel/Pd - Power Dissipation;83W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);54pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input... Read more

$10.92 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);39nC@30V/Number;1 P-Channel/Pd - Power Dissipation;83W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);54pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;1.6nF


    P-Channel 60V 22A 83W Surface Mount TO-252-3

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