Infineon-Single FETs, MOSFETs-IPD65R1K0CE

Description

Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;68W/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF


650V 1 N-channel 68W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;68W/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF650V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;68W/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF


    650V 1 N-channel 68W TO-252-3 Single FETs, MOSFETs RoHS

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