Infineon-Single FETs, MOSFETs-IPD65R1K4CFD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;262pF


650V 1.4Ω@10V 1 N-channel 28.4W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;262pF650V 1.4Ω@10V 1... Read more

$3.39 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;262pF


    650V 1.4Ω@10V 1 N-channel 28.4W TO-252-3 Single FETs, MOSFETs RoHS

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