Infineon-Single FETs, MOSFETs-IPD65R600C6

Description

Drain to Source Voltage;700V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;440pF


700V 600mΩ@10V 1 N-channel 63W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;440pF700V 600mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;440pF


    700V 600mΩ@10V 1 N-channel 63W TO-252-3 Single FETs, MOSFETs RoHS

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