Infineon-Single FETs, MOSFETs-IPD65R660CFD

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);594mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;615pF


650V 594mΩ@10V 1 N-channel 62.5W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);594mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;615pF650V 594mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);594mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;615pF


    650V 594mΩ@10V 1 N-channel 62.5W TO-252 Single FETs, MOSFETs RoHS

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