Infineon-Single FETs, MOSFETs-IPD65R950C6

Description

Drain to Source Voltage;700V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF


700V 950mΩ@10V 1 N-channel 37W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF700V 950mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;328pF


    700V 950mΩ@10V 1 N-channel 37W TO-252-3 Single FETs, MOSFETs RoHS

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