Infineon-Single FETs, MOSFETs-IPD65R950CFD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);14.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;36.7W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;380pF


650V 950mΩ@10V 1 N-channel 36.7W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);14.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;36.7W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.45 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);14.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;36.7W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;380pF


    650V 950mΩ@10V 1 N-channel 36.7W TO-252-3 Single FETs, MOSFETs RoHS

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