Infineon-Single FETs, MOSFETs-IPD78CN10NG

Description

Drain to Source Voltage;100V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);78mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;716pF/Output Capacitance(Coss);101pF


100V 78mΩ@10V 1 N-channel 31W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);78mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);78mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;716pF/Output Capacitance(Coss);101pF


    100V 78mΩ@10V 1 N-channel 31W TO-252-3 Single FETs, MOSFETs RoHS

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