Infineon-Single FETs, MOSFETs-IPD80R280P7

Description

Drain to Source Voltage;800V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.2nF


800V 280mΩ@10V 1 N-channel 101W TO-252-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.2nF800V 280mΩ@10V 1... Read more

$7.47 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.2nF


    800V 280mΩ@10V 1 N-channel 101W TO-252-3 Single FETs, MOSFETs RoHS

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