Infineon-Single FETs, MOSFETs-IPDD60R050G7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.05nF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.67nF


650V 50mΩ@10V 1 N-channel 278W HDSOP-10-6.5mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.05nF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$34.80 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.05nF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.67nF


    650V 50mΩ@10V 1 N-channel 278W HDSOP-10-6.5mm Single FETs, MOSFETs RoHS

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