Infineon-Single FETs, MOSFETs-IPDD60R125G7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);420pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.08nF


650V 125mΩ@10V 1 N-channel 120W HDSOP-10-6.6mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);420pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);420pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.08nF


    650V 125mΩ@10V 1 N-channel 120W HDSOP-10-6.6mm Single FETs, MOSFETs RoHS

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