Infineon-Single FETs, MOSFETs-IPDQ65R125CFD7AXTMA1

Description

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;160W/RDS(on);108mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.566nF/Output Capacitance(Coss);26pF


650V 108mΩ@10V 1 N-channel 160W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;160W/RDS(on);108mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.566nF/Output Capacitance(Coss);26pF650V 108mΩ@10V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;160W/RDS(on);108mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.566nF/Output Capacitance(Coss);26pF


    650V 108mΩ@10V 1 N-channel 160W Single FETs, MOSFETs RoHS

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