Infineon-Single FETs, MOSFETs-IPI65R110CFD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pF


650V 110mΩ@10V 1 N-channel 277.8W TO-262-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pF650V 110mΩ@10V... Read more

$8.43 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;277.8W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31.2A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);160pF


    650V 110mΩ@10V 1 N-channel 277.8W TO-262-3 Single FETs, MOSFETs RoHS

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