Infineon-Single FETs, MOSFETs-IPI80N03S4L-03

Description

Drain to Source Voltage;30V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;9.75nF/Output Capacitance(Coss);2.5nF


30V 2.4mΩ@10V 1 N-channel 136W TO-262-3-1 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;9.75nF/Output Capacitance(Coss);2.5nF


    30V 2.4mΩ@10V 1 N-channel 136W TO-262-3-1 Single FETs, MOSFETs RoHS

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