Infineon-Single FETs, MOSFETs-IPL60R065C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);65mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.85nF


650V 65mΩ@10V 1 N-channel 180W VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);65mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.85nF650V 65mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);65mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.85nF


    650V 65mΩ@10V 1 N-channel 180W VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

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