Infineon-Single FETs, MOSFETs-IPL60R199CP

Description

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16.4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.52nF


600V 199mΩ@10V 1 N-channel 139W VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16.4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.52nF600V 199mΩ@10V 1... Read more

$19.77 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);16.4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.52nF


    600V 199mΩ@10V 1 N-channel 139W VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

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