Infineon-Single FETs, MOSFETs-IPN50R650CE

Description

Drain to Source Voltage;550V/Gate Charge(Qg);15nC@13V/Number;1 N-channel/Pd - Power Dissipation;5W/RDS(on);650mΩ@13V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;342pF


550V 650mΩ@13V 1 N-channel 5W SOT-223-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);15nC@13V/Number;1 N-channel/Pd - Power Dissipation;5W/RDS(on);650mΩ@13V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);15nC@13V/Number;1 N-channel/Pd - Power Dissipation;5W/RDS(on);650mΩ@13V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;342pF


    550V 650mΩ@13V 1 N-channel 5W SOT-223-3 Single FETs, MOSFETs RoHS

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