Infineon-Single FETs, MOSFETs-IPP027N08N5

Description

Drain to Source Voltage;80V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;214W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;8.97nF


80V 2.7mΩ@10V 1 N-channel 214W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;214W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

$12.87 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;214W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;8.97nF


    80V 2.7mΩ@10V 1 N-channel 214W TO-220-3 Single FETs, MOSFETs RoHS

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