Infineon-Single FETs, MOSFETs-IPP028N08N3 G

Description

Drain to Source Voltage;80V/Gate Charge(Qg);206nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;14.2nF


80V 2.8mΩ@10V 1 N-channel 300W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);206nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;14.2nF80V 2.8mΩ@10V 1... Read more

$8.58 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);206nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;14.2nF


    80V 2.8mΩ@10V 1 N-channel 300W TO-220-3 Single FETs, MOSFETs RoHS

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