Infineon-Single FETs, MOSFETs-IPP083N10N5

Description

Drain to Source Voltage;100V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;100W/RDS(on);8.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;2.73nF


100V 8.3mΩ@10V 1 N-channel 100W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;100W/RDS(on);8.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

$6.18 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;100W/RDS(on);8.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;2.73nF


    100V 8.3mΩ@10V 1 N-channel 100W TO-220-3 Single FETs, MOSFETs RoHS

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