Infineon-Single FETs, MOSFETs-IPP126N10N3 G

Description

Drain to Source Voltage;100V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;94W/RDS(on);12.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.5nF


100V 12.3mΩ@10V 1 N-channel 94W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;94W/RDS(on);12.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;94W/RDS(on);12.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.5nF


    100V 12.3mΩ@10V 1 N-channel 94W TO-220-3 Single FETs, MOSFETs RoHS

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