Infineon-Single FETs, MOSFETs-IPP60R125C6

Description

Drain to Source Voltage;650V/Gate Charge(Qg);96nC@480V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.127nF


N-Channel 650V 30A 219W Through Hole TO-220

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);96nC@480V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$18.42 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);96nC@480V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.127nF


    N-Channel 650V 30A 219W Through Hole TO-220

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