Infineon-Single FETs, MOSFETs-IPP60R450E6

Description

Drain to Source Voltage;600V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);450mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;620pF


600V 450mΩ@10V 1 N-channel 74W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);450mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;620pF600V 450mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);450mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;620pF


    600V 450mΩ@10V 1 N-channel 74W TO-220-3 Single FETs, MOSFETs RoHS

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