Infineon-Single FETs, MOSFETs-IPP60R600P7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);9nC@400V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;363pF


650V 600mΩ@10V 1 N-channel 30W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);9nC@400V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;363pF650V 600mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);9nC@400V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;363pF


    650V 600mΩ@10V 1 N-channel 30W TO-220-3 Single FETs, MOSFETs RoHS

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