Infineon-Single FETs, MOSFETs-IPP65R045C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);93nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.63nF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.34nF


650V 45mΩ@10V 1 N-channel 227W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);93nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.63nF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$65.04 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);93nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.63nF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.34nF


    650V 45mΩ@10V 1 N-channel 227W TO-220-3 Single FETs, MOSFETs RoHS

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