Infineon-Single FETs, MOSFETs-IPP65R065C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);64nC@10V/Number;1 N-channel/Pd - Power Dissipation;171W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.11nF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;3.02nF


650V 65mΩ@10V 1 N-channel 171W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);64nC@10V/Number;1 N-channel/Pd - Power Dissipation;171W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.11nF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$12.36 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);64nC@10V/Number;1 N-channel/Pd - Power Dissipation;171W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.11nF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;3.02nF


    650V 65mΩ@10V 1 N-channel 171W TO-220-3 Single FETs, MOSFETs RoHS

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