Infineon-Single FETs, MOSFETs-IPP65R125C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.67nF


650V 125mΩ@10V 1 N-channel 101W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.67nF650V 125mΩ@10V 1... Read more

$14.28 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;101W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.67nF


    650V 125mΩ@10V 1 N-channel 101W TO-220 Single FETs, MOSFETs RoHS

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