Infineon-Single FETs, MOSFETs-IPP90R800C3

Description

Drain to Source Voltage;900V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);6.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF


900V 800mΩ@10V 1 N-channel 104W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);6.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);6.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF


    900V 800mΩ@10V 1 N-channel 104W TO-220-3 Single FETs, MOSFETs RoHS

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