Infineon-Single FETs, MOSFETs-IPS60R280PFD7S

Description

Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);280mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;656pF


650V 280mΩ@10V 1 N-channel 51W TO-251-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);280mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;656pF650V 280mΩ@10V 1... Read more

$4.77 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);15.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);280mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;656pF


    650V 280mΩ@10V 1 N-channel 51W TO-251-3 Single FETs, MOSFETs RoHS

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