Infineon-Single FETs, MOSFETs-IPU50R950CE

Description

Drain to Source Voltage;500V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;53W/RDS(on);950mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;231pF


500V 950mΩ@13V 1 N-channel 53W TO-251-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;53W/RDS(on);950mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;53W/RDS(on);950mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;231pF


    500V 950mΩ@13V 1 N-channel 53W TO-251-3 Single FETs, MOSFETs RoHS

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