Infineon-Single FETs, MOSFETs-IPW50R190CE

Description

Drain to Source Voltage;500V/Gate Charge(Qg);47.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;152W/RDS(on);190mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);24.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.137nF/Output Capacitance(Coss);68pF


500V 190mΩ@13V 1 N-channel 152W TO-247-3-41 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);47.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;152W/RDS(on);190mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);24.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);47.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;152W/RDS(on);190mΩ@13V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);24.8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.137nF/Output Capacitance(Coss);68pF


    500V 190mΩ@13V 1 N-channel 152W TO-247-3-41 Single FETs, MOSFETs RoHS

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